Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : -10 μA (Max.) @ VDS = -200V ■ Low RDS(ON) : 2.084 Ω (Typ.)

文件：246.95 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Advanced Power MOSFET

ONSEMI

安森美半导体

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -200V ■ Low RDS(ON) : 2.25 Ω (Typ.)

文件：247 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Advanced Power MOSFET

文件：251.41 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The TO-220 p

文件：1.64409 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司