SFH620AA_V02中文资料威世数据手册PDF规格书

DESCRIPTION

The SFH620AA, SFH620AGB features a high current

transfer ratio, low coupling capacitance and high isolation

voltage. These couplers have a GaAs infrared emitting diode

emitter, which is optically coupled to a silicon planar

phototransistor detector, and is incorporated in a plastic

DIP-4 package.

The coupling devices are designed for signal transmission

between two electrically separated circuits.

The couplers are end-stackable with 2.54 mm lead spacing.

This version complies with IEC 60950 (DIN VDE 0805) for

reinforced insulation up to an operation voltage of 400 VRMS

or DC.

FEATURES

• High current transfer ratios

- at 5 mA: 50 to 600

- at 1.0 mA: 45 typical (> 13)

• Low CTR degradation

• Good CTR linearity depending on forward

current

• Isolation test voltage, 5300 VRMS

• High collector emitter voltage, VCEO = 70 V

• Low saturation voltage

• Fast switching times

• Temperature stable

• Low coupling capacitance

• End stackable, 0.100 (2.54 mm) spacing

• High common mode interference immunity (unconnected

base)

• SMD option, see SFH620A, SFH6206 datasheet

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912