High Power Infrared LED (60 mW)

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Features: • High Power Infrared LED (60 mW) • Short switching times • Narrow halfangle (± 15°) • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. • Taping as Toplooker • Also avai

文件：481.55 Kbytes 页数：13 Pages

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艾迈斯欧司朗

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Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

文件：155.43 Kbytes 页数：12 Pages

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威世威世科技公司