Narrow beam LED in MIDLED package

Features: • High Power Infrared LED (60 mW) • Short switching times • Narrow halfangle (± 15°) • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. • Taping as Toplooker • Also avai

文件：481.55 Kbytes 页数：13 Pages

OSRAM

艾迈斯欧司朗

THREE PHASE ANGLE CONTROLLER

文件：328.55 Kbytes 页数：5 Pages

CELDUC

凡纪继电器

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

文件：155.43 Kbytes 页数：12 Pages

VishayVishay Siliconix

威世威世科技公司

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook Logic dc-to-dc • Low Current dc-to-dc Ordering Information: Si4650DY-T1-E3 (Lead (Pb)-free) Si4650DY-T1-G

文件：154.52 Kbytes 页数：12 Pages

VishayVishay Siliconix

威世威世科技公司