High Power Infrared Emitter (940nm) in SMR® Package

Features - Package: black epoxy - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - High Power Infrared LED - SMR® (Surface Mount Radial) package - Same package as photodiode SFH 2500 - Short switching times 

文件：1.16662 Mbytes 页数：17 Pages

AMSCO

艾迈斯欧司朗

High Power Infrared Emitter (940nm) in SMR® Package

Features - Package: black epoxy - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - High Power Infrared LED - SMR® (Surface Mount Radial) package - Same package as photodiode SFH 2500 - Short switching times 

文件：1.16662 Mbytes 页数：17 Pages

AMSCO

艾迈斯欧司朗

30V Complementary PowerTrench MOSFET

General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 6 A, 30 V RDS

文件：56.76 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

30V Complementary PowerTrench MOSFET

General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 6 A, 30 V RDS

文件：56.76 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司