Schnelle IR-Lumineszenzdiode (950 nm) im SMR-Gehuse High-Speed Infrared Emitter (950 nm) in SMR Package

Features • High pulse power and high radiant flux Φe • SMR® (Surface Mount Radial) package • Very short switching times (10 ns) • Very high long-time stability • High reliability Applications • Device with high radiant intensity suitable for surface mounting (SMT) • High

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Infineon

英飞凌

Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter Lead (Pb) Free Product - RoHS Compliant

Features • High Power GaAs-LED (40mW) • High Efficiency at low currents • Typical peak wavelength 950nm • Narrow angle SMT-Sidelooker Applications • Device with high radiant intensity suitable for surface mounting (SMT) • High data transmission rate up to 100 Mbaud (IR keybo

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OSRAM

艾迈斯欧司朗

N- and P-Channel MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Level Shift • Load Switch

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VishayVishay Siliconix

威世威世科技公司

N- and P-Channel MOSFET

文件：279.11 Kbytes 页数：12 Pages

VishayVishay Siliconix

威世威世科技公司

Enhancement Mode Power Mos.FET

文件：984.41 Kbytes 页数：7 Pages

SECOS

喜可士