Schnelle IR-Lumineszenzdiode (950 nm) im SMR-Gehuse High-Speed Infrared Emitter (950 nm) in SMR Package

Features • High pulse power and high radiant flux Φe • SMR® (Surface Mount Radial) package • Very short switching times (10 ns) • Very high long-time stability • High reliability Applications • Device with high radiant intensity suitable for surface mounting (SMT) • High

文件：63.22 Kbytes 页数：6 Pages

INFINEON

英飞凌

Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter Lead (Pb) Free Product - RoHS Compliant

Features • High Power GaAs-LED (40mW) • High Efficiency at low currents • Typical peak wavelength 950nm • Narrow angle SMT-Sidelooker Applications • Device with high radiant intensity suitable for surface mounting (SMT) • High data transmission rate up to 100 Mbaud (IR keybo

文件：225.92 Kbytes 页数：8 Pages

OSRAM

艾迈斯欧司朗

Schnelle IR-Lumineszenzdiode (950 nm) im SMR-Gehuse High-Speed Infrared Emitter (950 nm) in SMR Package

Infineon

英飞凌

Fixed Frequency Synthesizer Surface Mount Module

文件：77.5 Kbytes 页数：2 Pages

ZCOMM

Complementary MOSFET Half-Bridge (N- and P-Channel)

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

文件：78.49 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Complementary MOSFET Half-Bridge (N- and P-Channel)

文件：124.97 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司