GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Features ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● High reliability ● High radiant intensity ● High pulse handling capability ● Available in groups ● Same package as SFH 305 Applications ● Miniature photointerrupters ● Punched tape-readers ● Industria

文件：33.63 Kbytes 页数：4 Pages

SIEMENS

西门子

GaAs-IR-Lumineszenzdiode

文件：130.96 Kbytes 页数：7 Pages

OSRAM

艾迈斯欧司朗

GaAs Infrared Emitter

文件：230.15 Kbytes 页数：6 Pages

OSRAM

艾迈斯欧司朗

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Infineon

英飞凌

High Power Infrared Emitter (850 nm)

Features: • Very small package: (LxWxH) 1.7 mm x 0.8 mm x 0.65 mm • Short switching times • High optical total power Applications • Miniature photointerrupters • Industrial electronics • For control and drive circuits • Sensor technology • Alarm and safety equipment • Not for new designs

文件：222.1 Kbytes 页数：8 Pages

OSRAM

艾迈斯欧司朗

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung

Features: • Very small package: (LxWxH) 3.2 mm x 1.6 mm x 1 mm • High optical total power • UL version available ( ordering code & test conditions on request) Applications • Miniature photointerrupters • Mobile devices • Proximity sensor • For control and drive circuits

文件：193.87 Kbytes 页数：10 Pages

OSRAM

艾迈斯欧司朗

Chip LED Lens High Power Infrared Emitter (850 nm)

Features: —Package: black epoxy —ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) —High optical power —Double stack emitter —Very small SMT package —Reverse mount

文件：764.44 Kbytes 页数：17 Pages

AMSCO

艾迈斯欧司朗

Chip LED Lens High Power Infrared Emitter (850 nm)

Features: —Package: black epoxy —ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) —High optical power —Double stack emitter —Very small SMT package —Reverse mount

文件：764.44 Kbytes 页数：17 Pages

AMSCO

艾迈斯欧司朗

GaAs-IR-Lumineszenzdiode

文件：130.96 Kbytes 页数：7 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

文件：425.05 Kbytes 页数：13 Pages

OSRAM

艾迈斯欧司朗