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ASRD806-TR

SURFACEMOUNTSTEPRECOVERYDIODE

DESCRIPTION: TheASRD800SeriesofStepRecoveryDiodesareDesignedforSynthesiserandSamplerApplicationsRequiringaHighPerformancetoCostRatio. FEATURESINCLUDE: •TransitionTimeasLowas70pS •SurfaceMountSOD323Package

ASI

Advanced Semiconductor, Inc

ASRD806T-TR

SURFACEMOUNTSTEPRECOVERYDIODE

DESCRIPTION: TheASRD800SeriesofStepRecoveryDiodesareDesignedforSynthesiserandSamplerApplicationsRequiringaHighPerformancetoCostRatio. FEATURESINCLUDE: •TransitionTimeasLowas70pS •SurfaceMountSOD323Package

ASI

Advanced Semiconductor, Inc

ATTINY806

tinyAVR짰0-series

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

BAQ806

AMPINdiode

DESCRIPTION DO-214ACsurfacemountablepackagewithglasspassivatedchip.Thewell-definedvoid-freecaseisofatransfer-mouldedthermo-settingplastic. FEATURES •Glasspassivated •Highmaximumoperatingtemperature •Lowleakagecurrent •Excellentstability •UL94V-O

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BC806

80V,500mAPNPgeneral-purposetransistors

Featuresandbenefits •Highcurrent •Highvoltage •Twocurrentgainselections •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC806_SER

80V,500mAPNPgeneral-purposetransistors

Featuresandbenefits •Highcurrent •Highvoltage •Twocurrentgainselections •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC806H

80V,500mAPNPgeneral-purposetransistors

Featuresandbenefits •Highcurrent •Highvoltage •Twocurrentgainselections •High-temperatureapplicationsupto175°C •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC806H_SER

80V,500mAPNPgeneral-purposetransistors

Featuresandbenefits •Highcurrent •Highvoltage •Twocurrentgainselections •High-temperatureapplicationsupto175°C •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC806W

80V,500mAPNPgeneral-purposetransistors

Featuresandbenefits •Highcurrent •Highvoltage •Twocurrentgainselections •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC806W_SER

80V,500mAPNPgeneral-purposetransistors

Featuresandbenefits •Highcurrent •Highvoltage •Twocurrentgainselections •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BF806

DiscreteSemiconductors

DiscretsSemiconductors FETsForVHFAmplifiersandMixers ForLowNoiseAmplifiers Lowleakage/NoiseCurrent DualGateMosfets(NChannelDepletion) Lowleakge

AMMSEMI

American Microsemiconductor

BR806

SiliconBridgeRectifiers

HYyueqing hongyi electronics co.,ltd

宏一乐清市宏一电子有限公司

BR806

SILICONBRIDGERECTIFIERS

EIC

EIC

BR806

SILICONBRIDGERECTIFIERS

Good-Ark

Good-Ark

BR806

SILICONBRIDGERECTIFIERS

REVERSEVOLTAGE-50to1000Volts FORWARDCURRENT-8.0Amperes FEATURES ●Surgeoverloadrating-200amperespeak ●Lowforwardvoltagedrop ●Smallsize;simpleinstallation ●Sliverplatedcopperleads ●Mountingposition:Any

HYyueqing hongyi electronics co.,ltd

宏一乐清市宏一电子有限公司

BR806

SiliconBridgeRectifiers8Ampsto10Amps

SiliconBridgeRectifiers8Ampsto10Amps TheplasticmaterialcarriesU/Lrecognition94V-O

EDAL

Edal Industries, Inc.

BR806

SILICONBRIDGERECTIFIERS

PRV:50-1000Volts Io:8.0Amperes FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Idealforprintedcircuitboard *Pb/RoHSFree

EIC

EIC

BR806

SILICONBRIDGERECTIFIERS

HYyueqing hongyi electronics co.,ltd

宏一乐清市宏一电子有限公司

BR806

SILICONBRIDGERECTIFIERS

EIC

EIC

BR806

SILICONBRIDGERECTIFIERS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

详细参数

  • 型号:

    SFF806A

  • 制造商:

    ASEMI

  • 制造商全称:

    ASEMI

  • 功能描述:

    SUPER-FAST RECOVERY RECTIFIERS

供应商型号品牌批号封装库存备注价格
23+
N/A
59210
正品授权货源可靠
询价
MHC
23+
TO-220
40
原装现货
询价
MHCHXM
23+
TO-220F-2
50000
全新原装正品现货,支持订货
询价
MHCHXM
21+
TO-220F-2
10000
原装现货假一罚十
询价
MHCHXM
TO220F-2
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
海克美
ITO220AC
90000
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
MHCHXM
23+
NA/
790
优势代理渠道,原装正品,可全系列订货开增值税票
询价
?海矽美
23+
TO-220
8000
原装正品
询价
TSC
17+
TO220F-3
6200
询价
TSC/台半
1926+
TO-220F
6852
只做原装正品现货!或订货假一赔十!
询价
更多SFF806A供应商 更新时间2024-5-22 11:36:00