N-Channel MOSFET

SFD30N06BT 采用稳先微电子先进的高密度沟槽技术制造，低导通电阻，高雪崩击穿耐量，可广泛应用于电工工具，锂电保护，PD快充和直流无刷电机等应用。 • 60V, 24A\n• 超低的栅极电荷\n• 杰出的 CdV/dt 特性;

Winsemi

稳先微电子

N-Channel MOSFET

General Description This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This P

文件：947.97 Kbytes 页数：7 Pages

semiWell

矽门微

N-Channel 60 V (D-S) MOSFET

文件：1.31327 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.045 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICA

文件：206.32 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体