TIP122

DARLINGTON5AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS

PlasticMedium-PowerComplementarySiliconTransistors ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain— hFE=2500(Typ)@IC=4.0Adc •Collector–EmitterSustainingVoltage—@100mAdc VCEO(sus)=60Vdc(Min)—TIP12

TIP122

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration.Theresultingtransistorsshowexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Lowcollector-emittersaturationvoltage ■Comp

TIP122

NPNSILICONPOWERDARLINGTONS

NPNSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithTIP125,TIP126andTIP127 ●65Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●MinimumhFEof1000at3V,3A

TIP122

POWERTRANSISTORS(5.0A,60-100V,65W)

...designedforgeneral−purposeamplifierandlow−speedswitchingapplications. FEATURES: •Collector−EmitterSustainingVoltage− VCEO(sus)=60V(Min)−TIP120,TIP125 =80V(Min)−TIP121,TIP126 =100V(Min)−TIP122,TIP127 •LowColl

TIP122

PowerDarlingtonsforLinearandSwitchingApplications

TIP120,121,122NPNPLASTICPOWERTRANSISTORS TIP125,126,127PNPPLASTICPOWERTRANSISTORS PowerDarlingtonsforLinearandSwitchingApplications

TIP122

EPITAXIALPLANARNPNTRANSISTOR(SWITCHING,HAMMERDRIVER,PULSEMOTORDRIVER)

SWITCHINGAPPLICATIONS. HAMMERDRIVER,PULSEMOTORDRIVERAPPLICATIONS. FEATURES •HighDCCurrentGain:hFE=1000(Min.)atVCE=3V,IC=3A. •HighCollectorBreakdownVoltage:VCEO=100V(Min.)

TIP122

MediumPowerLinearSwitchingApplications

Features •MediumPowerLinearSwitchingApplications •ComplementarytoTIP125/TIP126/TIP127

TIP122

PlasticMedium-PowerComplementarySiliconTransistors

TIP122

NPNEPITAXIALTRANSISTOR

DESCRIPTION TheUTCTIP122isaNPNepitaxialtransistor,designedforuseingeneralpurposeamplifierlow-speedswitchingapplications.

TIP122

Plastic-EncapsulatedTransistors