N-Channel MOSFET in a Hermetically sealed TO39 Metal Package

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SEME-LAB

N-Channel MOSFET in a Hermetically sealed TO39 Metal Package

文件：12.45 Kbytes 页数：1 Pages

SEME-LAB

N-Channel MOSFET in a Hermetically sealed TO39 Metal Package

文件：12.45 Kbytes 页数：1 Pages

SEME-LAB

N-CHANNEL ENHANCEMENTE-MODE

Description The 2N6786 is an n-channel enhancement-mode silicon-gate power MOS field-effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=3.6ohm, Id=1.25A)

The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high transconductance. The HEXFET transistors also fea

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IRF