10 Amp Low Loss Ultrafast Rectifier

文件：144.3 Kbytes 页数：2 Pages

SECOS

喜可士

Trench gate field-stop IGBT, H series 600 V, 10 A high speed

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

文件：1.73583 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, H series 600 V, 10 A high speed

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

文件：1.73583 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, H series 600 V, 10 A high speed

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

文件：1.73583 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体