IGBT模块

• Homogeneous Si\n• Trench = Trenchgate technology\n• VCE(sat) with positive temperature coefficient\n• High short circuit capability\n• Press-fit pins as auxiliary contacts\n• Thermally optimized ceramic\n• UL recognized, file no. E63532;

Semikron-DANFOSS

赛米控丹佛斯

IGBT模块

• Homogeneous Si\n• Trench = Trenchgate technology\n• VCE(sat) with positive temperature coefficient\n• High short circuit capability\n• Press-fit pins as auxiliary contacts\n• Thermally optimized ceramic\n• UL recognized, file no. E63532;

Semikron-DANFOSS

赛米控丹佛斯

Trench IGBT Modules

Features* • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • Press-fit pins as auxiliary contacts • Thermally optimized ceramic • UL recognized, file no. E63532 Typical Applications • AC inverter drives

文件：676.54 Kbytes 页数：6 Pages

Semikron

赛米控丹佛斯

Trench IGBT Modules

Features • With Silicon Carbide (SiC) Schottky diodes • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • Press-fit pins as auxiliary contacts • Thermally optimized ceramic • UL recognized, file no. E63532 Typical Applications* • AC inv

文件：514.24 Kbytes 页数：6 Pages

Semikron

赛米控丹佛斯