2.0AMP High Efficiency Recovery Rectifiers

FEATURES • Ideal for surface mount applications • Easy pick and place • Built-in strain relief • Fast switching speed

文件：210.03 Kbytes 页数：2 Pages

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Voltage 1000 V 2.0 Amp High Efficiency Recovery Rectifiers

FEATURES • Ideal for surface mount applications • Easy pick and place • Built-in strain relief • Fast switching speed

文件：663.06 Kbytes 页数：2 Pages

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N-CHANNEL POWER MOS TRANSISTORS

HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.

文件：808.57 Kbytes 页数：3 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL POWER MOS TRANSISTORS

HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.

文件：808.57 Kbytes 页数：3 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL POWER MOS TRANSISTORS

HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.

文件：808.57 Kbytes 页数：3 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL POWER MOS TRANSISTORS

HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.

文件：808.57 Kbytes 页数：3 Pages

STMICROELECTRONICS

意法半导体

6.1 x 2.6 x 2.6 mm (2410)

文件：71.71 Kbytes 页数：1 Pages

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6.1 x 2.6 x 2.6 mm (2410)

文件：71.71 Kbytes 页数：1 Pages

CONQUER

功得电子

6.1 x 2.6 x 2.6 mm (2410)

文件：71.71 Kbytes 页数：1 Pages

CONQUER

功得电子

6.1 x 2.6 x 2.6 mm (2410)

文件：71.71 Kbytes 页数：1 Pages

CONQUER

功得电子