Surface-Mount ESD Capability Rectifiers

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop • ESD capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/

文件：111.14 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Ideal for automated placement

文件：100.58 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface-Mount ESD Capability Rectifiers

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop • ESD capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/

文件：111.14 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface-Mount ESD Capability Rectifiers

Very low profile - typical height of 1.1 mm\nIdeal for automated placement\nOxide planar chip junction;

Vishay

威世

Surface-Mount ESD Capability Rectifiers

Very low profile - typical height of 1.1 mm\n Ideal for automated placement\n Oxide planar chip junction\n\n ;

Vishay

威世

Package：TO-277，3-PowerDFN；包装：带盒（TB） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 100V 2.9A TO277A

Vishay General Semiconductor - Diodes Division

Package：TO-277，3-PowerDFN；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 100V 2.9A TO277A

Vishay General Semiconductor - Diodes Division

Package：TO-277，3-PowerDFN；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 100V 2.9A TO277A

Vishay General Semiconductor - Diodes Division