6A, 60V, RDS(on) 44 m
(ohm) N-Channel Enhancement Mode Power MOSFET

文件：617.39 Kbytes 页数：4 Pages

SECOS

喜可士

MosFET

Secos

喜可士

TrenchMOS transistor Standard level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHT6N06T in SOT223.

文件：71.29 Kbytes 页数：10 Pages

PHI

飞利浦

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET APPLICATIONS • Load Switches for Portable Devices

文件：1.06176 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC-DC converters and general

文件：67.61 Kbytes 页数：9 Pages

PHI

飞利浦