SDT3P02-C

Marking：3P02；Package：DFN2x2-6L-J；Dual-P Enhancement Mode MOSFET

MMSF3P02HD

PowerMOSFET3Amps,20VoltsP?묬hannelSO??

TheseminiaturesurfacemountMOSFETsfeatureultralowRDS(on)andtruelogiclevelperformance.Theyarecapableofwithstandinghighenergyintheavalancheandcommutationmodesandthedrain−to−sourcediodehasaverylowreverserecoverytime.MiniMOSdevicesaredesignedforuseinlowvolt

MMSF3P02HD

SINGLETMOSPOWERMOSFET3.0AMPERES20VOLTS

MediumPowerSurfaceMountProducts TMOSSingleP-ChannelFieldEffectTransistors MiniMOS™devicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityHDTMOSprocess. •UltraLowRDS(on)ProvidesHigherEfficiencyandExtendsBatteryLife •LogicLevelGat

RD3P02BAT

Pch-100V-20APowerMOSFET

Features 1)Lowon-resistance 2)Highpowersmallmoldpackage 3)Pb-freeplating;RoHScompliant 4)100RgandUIStested 5)Halogenfree Application Switching

WFY3P02

P-Channel20-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •PASwitch •DC/DCConverters

WFY3P02

TrenchPowerMOSFET??0V,SingleP?묬hannel,SOT??3