Small Signal Fast Switching Diode

General Description Single general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-23 surface mounted device (SMD) packages. Features and Benefits • Silicon epitaxial planar diode • High switching speed: trr≤4ns • Low forward drop voltage and low leakag

文件：308.38 Kbytes 页数：5 Pages

KODENSHI

可天士

Small Signal Fast Switching Diode

General Description Single general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-323F surface mounted device (SMD) packages. Features and Benefits • Silicon epitaxial planar diode • High switching speed: trr≤4ns • Low forward drop voltage and low leakage

文件：259.85 Kbytes 页数：5 Pages

KODENSHI

可天士

Switching Diode

Features • SMD package : SOT-323F • Low forward voltage : VF=0.9V(Typ.) • Fast reverse recovery time : trr=1.6 ㎱(Typ.) • Small total capacitance : CT=2.2 ㎊(Typ.)

文件：105.26 Kbytes 页数：3 Pages

AUK

Switching Diode

Features • SMD package : SOT-323 • Low forward voltage : VF=0.9V(Typ.) • Fast reverse recovery time : trr=1.6 ㎱(Typ.) • Small total capacitance : CT=2.2 ㎊(Typ.)

文件：268.49 Kbytes 页数：4 Pages

AUK

Small Signal Fast Switching Diode

General Description Single general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-323 surface mounted device (SMD) packages. Features and Benefits • Silicon epitaxial planar diode • High switching speed: trr≤4ns • Low forward drop voltage and low leakage

文件：308.5 Kbytes 页数：5 Pages

KODENSHI

可天士

Small Signal Fast Switching Diode

General Description Single general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-323F surface mounted device (SMD) packages. Features and Benefits • Silicon epitaxial planar diode • High switching speed: trr≤4ns • Low forward drop voltage and low leakage

文件：259.92 Kbytes 页数：5 Pages

KODENSHI

可天士

Switching Diode

Features • SMD package : SOT-323F • Low forward voltage : VF=0.9V(Typ.) • Fast reverse recovery time : trr=1.6 ㎱(Typ.) • Small total capacitance : CT=2.2 ㎊(Typ.)

文件：104.72 Kbytes 页数：3 Pages

AUK

SILICON EPITAXIAL PLANAR SWITCHING DIODE

SILICON EPITAXIAL PLANAR SWITCHING DIODE for ultra high speed switching application Features • Fast reverse recovery time • Small total capacitance • Low forward voltage

文件：316.2 Kbytes 页数：3 Pages

SEMTECH_ELEC

先之科半导体

丝印：DS170025H5；Package：TO-247-2L；5th Generation 1700V/25A SiC Schottky Barrier Diode

Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant

文件：644.51 Kbytes 页数：9 Pages

SANAN

三安光电

High Voltage Switching Diode

General Description Single general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-23 surface mounted device (SMD) packages. Features and Benefits • Silicon epitaxial planar diode • High switching speed • Low forward drop voltage and low leakage current •

文件：254.03 Kbytes 页数：5 Pages

KODENSHI

可天士