丝印：SDD；Package：SOT-23；TPS709 150-mA, 30-V, 1-μA IQ Voltage Regulators With Enable

1 Features • Ultra-low IQ: 1 μA • Reverse current protection • Low ISHUTDOWN: 150 nA • Input voltage range: 2.7 V to 30 V • Supports 200-mA peak output • 2% accuracy over temperature • Available in fixed-output voltages: 1.2 V to 6.5 V • Thermal shutdown and overcurrent protection •

文件：2.12946 Mbytes 页数：39 Pages

TI

德州仪器

丝印：SDD；Package：SOT-23；TPS709 150-mA, 30-V, 1-μA IQ Voltage Regulators With Enable

1 Features • Ultra-low IQ: 1 μA • Reverse current protection • Low ISHUTDOWN: 150 nA • Input voltage range: 2.7 V to 30 V • Supports 200-mA peak output • 2% accuracy over temperature • Available in fixed-output voltages: 1.2 V to 6.5 V • Thermal shutdown and overcurrent protection •

文件：2.12946 Mbytes 页数：39 Pages

TI

德州仪器

丝印：SDD；Package：SOT-23；TPS709 150-mA, 30-V, 1-關A IQ Voltage Regulators with Enable

文件：1.89085 Mbytes 页数：36 Pages

TI

德州仪器

丝印：SDD；Package：SOT-23；TPS709 150-mA, 30-V, 1-關A IQ Voltage Regulators with Enable

文件：2.11287 Mbytes 页数：39 Pages

TI

德州仪器

丝印：SDD；Package：SOT-23；TPS709 150-mA, 30-V, 1-關A IQ Voltage Regulators with Enable

文件：1.89085 Mbytes 页数：36 Pages

TI

德州仪器

丝印：SDD；Package：SOT-23；TPS709 150-mA, 30-V, 1-關A IQ Voltage Regulators with Enable

文件：2.11287 Mbytes 页数：39 Pages

TI

德州仪器

丝印：SDD0860L1；Package：TO-252AA；Optima Diode - Low forward voltage drop, Fast Recovery Diode

Features  Fast recovery  Low forward voltage  Optimized trade-off performance between VF & TRR  Soft recovery characteristic for better EMI  High junction temperature 150 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Application  PF

文件：309.68 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：SDD0860S1；Package：TO-252AA；Speedy Diode - Short Reverse Recovery Time, Fast Recovery Diode

Features  Fast recovery  Suppressed switching loss with low TRR  Soft recovery characteristic for better EMI  High junction temperature 150 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Application  PFC, UPS, PV Inverter, EV Charging

文件：307.82 Kbytes 页数：5 Pages

PANJIT

強茂

Silicon Carbide Schottky Diode

Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • Ideal diode for Power Factor Correction up to 800W1) • No fo

文件：280.47 Kbytes 页数：9 Pages

Infineon

英飞凌

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：802.04 Kbytes 页数：8 Pages

Samhop

三合微科