1.0 AMP. Schottky Barrier Rectifiers

Features ◇ Metal to silicon rectifier, majority carrier conduction ◇ Low forward voltage drop ◇ Easy pick and place ◇ High surge current capability ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Epitaxial construction ◇ High temperature soldering: 260oC/ 10

文件：101.02 Kbytes 页数：2 Pages

TSC

台湾半导体

1.0 AMP. Schottky Barrier Bridge Rectifiers

Features ◇ Metal to silicon rectifier, majority carrier conduction ◇ Low forward voltage drop ◇ Easy pick and place ◇ High surge current capability ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Epitaxial construction ◇ High temperature soldering: 260°C/ 10

文件：254.36 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

1.0 AMP. Schottky Barrier Bridge Rectifiers

文件：408.94 Kbytes 页数：2 Pages

TSC

台湾半导体

General Purpose Schottky Barrier Diode

General Description The SDB110Q Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature surface mount package is excellent for hand-held and portable applications where space

文件：175.7 Kbytes 页数：5 Pages

KODENSHI

可天士

Schottky Barrier Diode

Features • Low forward voltage : VF= Max. 0.4V (@ IF=10mA) • Low reverse current : IR= Max. 0.5 ㎂ (@ VR=5V) • High speed switching application

文件：33.64 Kbytes 页数：3 Pages

AUK

silicon bilateral voltage triggered switch

文件：127.65 Kbytes 页数：6 Pages

SUNTAC

silicon bilateral voltage triggered switch

文件：127.65 Kbytes 页数：6 Pages

SUNTAC

silicon bilateral voltage triggered switch

文件：127.65 Kbytes 页数：6 Pages

SUNTAC

SMD POWER INDUCTORS

文件：574.64 Kbytes 页数：6 Pages

SUPERWORLD

SMD POWER INDUCTORS

文件：574.64 Kbytes 页数：6 Pages

SUPERWORLD