Schottky Barrier Diode

Features • Low forward voltage : VF= Max. 0.4V (@ IF=10mA) • Low reverse current : IR= Max. 0.5 ㎂ (@ VR=5V) • High speed switching application

文件：33.64 Kbytes 页数：3 Pages

AUK

1.0 AMP. Schottky Barrier Bridge Rectifiers

Features ◇ Metal to silicon rectifier, majority carrier conduction ◇ Low forward voltage drop ◇ Easy pick and place ◇ High surge current capability ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Epitaxial construction ◇ High temperature soldering: 260°C/ 10

文件：254.36 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

1.0 AMP. Schottky Barrier Bridge Rectifiers

Features ◇ Metal to silicon rectifier, majority carrier conduction ◇ Low forward voltage drop ◇ Easy pick and place ◇ High surge current capability ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Epitaxial construction ◇ High temperature soldering: 260°C/ 10

文件：254.36 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

1.0 AMP. Schottky Barrier Rectifiers

Features ◇ Metal to silicon rectifier, majority carrier conduction ◇ Low forward voltage drop ◇ Easy pick and place ◇ High surge current capability ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Epitaxial construction ◇ High temperature soldering: 260oC/ 10

文件：101.02 Kbytes 页数：2 Pages

TSC

台湾半导体

1.0 AMP. Schottky Barrier Bridge Rectifiers

Features ◇ Metal to silicon rectifier, majority carrier conduction ◇ Low forward voltage drop ◇ Easy pick and place ◇ High surge current capability ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Epitaxial construction ◇ High temperature soldering: 260°C/ 10

文件：254.36 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

1.0 AMP. Schottky Barrier Rectifiers

Features ◇ Metal to silicon rectifier, majority carrier conduction ◇ Low forward voltage drop ◇ Easy pick and place ◇ High surge current capability ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Epitaxial construction ◇ High temperature soldering: 260oC/ 10

文件：101.02 Kbytes 页数：2 Pages

TSC

台湾半导体

Schottky Barrier Diode

Features • Very low forward voltage: VF=0.37Max. • Low switching loss • High reliability Applications • Portable equipment battery applications • SMPS applications

文件：163 Kbytes 页数：3 Pages

AUK

30V, 1A SCHOTTKY BARRIER RECTIFIER

Description The SDB130 is suited for Switch Mode Power Supply and high frequency DC to DC converters. This device is especially intended for use in low voltage, high frequency inverters, freewheeling and polarity protection applications. Features • Low forward voltage drop • Low power loss an

文件：235.01 Kbytes 页数：5 Pages

KODENSHI

可天士

30V, 1A SCHOTTKY BARRIER RECTIFIER

Description The SDB130B is suited for Switch Mode Power Supply and high frequency DC to DC converters. This device is especially intended for use in low voltage, high frequency inverters, freewheeling and polarity protection applications. Features • Low forward voltage drop • Low power loss a

文件：240.69 Kbytes 页数：5 Pages

KODENSHI

可天士

Schottky Barrier Diode

Features • Low switching loss • High reliability • Very low reverse current: IR=0.15mA Max. @ VR=30V • Low forward voltage: VF=0.49V Max. @ IF=1A Applications • Portable equipment battery applications • SMPS applications

文件：283.08 Kbytes 页数：3 Pages

AUK