HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS

Description The SD210DE/214DE are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD214DE is normally used for
±10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ult

文件：357.2 Kbytes 页数：2 Pages

LINEAR

Inner DC Block, 75 Ohm, 10 MHz to 4 GHz with BNC Male to BNC Female Connectors

Features • Inner DC Blocks • BNC Connectorized Configuration • 10 MHz to 4 GHz Frequency Range • 75 Ohm Impedance • Max VSWR of 1.35:1 • Applications • Test and Measurement • Ground Loop Elimination • Signal to Noise Ratio (SNR) Improvement • Description • Fairview Microwave’s SD8231A i

文件：332.65 Kbytes 页数：3 Pages

FAIRVIEW

Inner and Outer DC Block, 75 Ohm 100 MHz to 4 GHz with BNC Male to BNC Female Connectors

Features • Inner/Outer DC Blocks • BNC Connectorized Configuration • 100 MHz to 4 GHz Frequency Range • 50 Ohm Impedance • Max VSWR of 1.35:1 • Applications • Test and Measurement • Ground Loop Elimination • Signal to Noise Ratio (SNR) Improvement • Description • Fairview Microwave’s SD

文件：335.23 Kbytes 页数：3 Pages

FAIRVIEW

Inner DC Block, 75 Ohm 10 MHz to 4 GHz with N Male to N Female Connectors

Features • Inner DC Blocks • N Connectorized Configuration • 10 MHz to 4 GHz Frequency Range • 75 Ohm Impedance • Max VSWR of 1.35:1 • Applications • Test and Measurement • Ground Loop Elimination • Signal to Noise Ratio (SNR) Improvement • Description • Fairview Microwave’s SD8234A is

文件：301.84 Kbytes 页数：3 Pages

FAIRVIEW

Inner and Outer DC Block, 75 Ohm 100 MHz to 4 GHz with N Male to N Female Connectors

Features • Inner/Outer DC Blocks • N Connectorized Configuration • 100 MHz to 4 GHz Frequency Range • 75 Ohm Impedance • Max VSWR of 1.35:1 • Applications • Test and Measurement • Ground Loop Elimination • Signal to Noise Ratio (SNR) Improvement • Description • Fairview Microwave’s SD82

文件：291.52 Kbytes 页数：3 Pages

FAIRVIEW

Fast Recovery Diodes (Hockey PUK Version), 810/910 A

FEATURES • High power FAST recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Hockey PUK vers

文件：396.36 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Fast Recovery Diodes (Hockey PUK Version), 810/910 A

FEATURES • High power FAST recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Hockey PUK vers

文件：396.36 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Fast Recovery Diodes (Hockey PUK Version), 810/910 A

FEATURES • High power FAST recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Hockey PUK vers

文件：396.36 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Fast Recovery Diodes (Hockey PUK Version), 810/910 A

FEATURES • High power FAST recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Hockey PUK vers

文件：396.36 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Fast Recovery Diodes (Hockey PUK Version), 810/910 A

FEATURES • High power FAST recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Hockey PUK vers

文件：396.36 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司