SD57030中文资料30W 28V HF至1GHz LDMOS晶体管数据手册ST规格书

描述 Description

The SD57030 is a common source N-channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity.

特性 Features

• In compliance with the 2002/95/EC european directive
• Excellent thermal stability
• POUT30W with 13dB gain @ 945MHz
• Common source configuration
• Internal input matching
• BeO free package

简介

SD57030属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的SD57030晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。