SD560

TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE - 20 to 100 Volts

FEATURES *Metaltosiliconrectifiermajoritycarrierconduction *Lowpowerloss,Highefficiency *Highcurrentcapability *Lowforwardvoltagedrop *Highsurgecapacity *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications

SD5600

Hermetic Optoschmitts

[HONEYWELLINC.]

SD5600

Infrared Sensors Line Guide

FEATURES REFLECTIVESENSORS HOA1395. Features:Side-lookingplasticpackage •Phototransistoroutput •Infraredemitterandphototransistordetectorinasinglepackage •Lowprofilefordesignflexibility •Designedforshort-distancedetection •Enhancedsensitivity•Unfocusedforsensi

SD5600-001

SD5600-001 - 红外接收器, Optoschmitt, 12 °, 16 V, 4.5 V, -40 °C; ·6° (nominal) acceptance angle\n·High noise immunity output\n·TTL/LSTTL/CMOS compatible\n·Buffer (SD5600) or inverting (SD5610) logic available\n·Mechanically & spectrally matched to SE3450/5450, SE3455/5455 & SE3470/5470 infrared emitting diodes\n;

The SD5600-001 is a single-chip Optoschmitt IC Detector mounted in a TO-46 metal can package. The photodetector consists of a photodiode, amplifier, voltage regulator, Schmitt trigger and an NPN output transistor with 10kR (nominal) pull-up resistor. Output rise and fall times are independent of the rate of change of incident light. Detector sensitivity has been internally temperature compensated. The TO-46 package is ideally suited for operating in hostile environments. Buffer - Output is HI when incident light intensity is above the turn-on threshold level. Inverter - Output is LO when incident light intensity is above the turn-on threshold level.

SD5604

Hermetic Optoschmitts

[HONEYWELLINC.]

SD56060

60 W, 28 V, HF to 1 GHz RF power LDMOS transistor

Features •Excellentthermalstability •Commonsourceconfigurationpush-pull •BeO-freepackage Description TheSD56060isacommonsourceN-channelenhancement-modelateralfield-effect RFpowertransistordesignedforbroadbandcommercialandindustrialapplications atfrequenciesup

SD56060

60 W，28 V，HF至1 GHz RF功率LDMOS晶体管; • Excellent thermal stability \n• Common source configuration push-pull \n• BeO-free package;

The SD56060 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. It is designed for high gain and broadband performance operating in common source mode at 28 V.\n\n

SD560B

SD560B STANDARD RECTIFIER

Features GlassPassivatedDieConstruction IdeallySuitedforAutomaticAssembly LowForwardVoltageDrop LowPowerLoss BuiltStrainRelief PlasticCaseMaterialhasULFlammability ClassificationRating94V-O ThisisaHalogenFreeDevice AllSMCpartsaretraceabletothewaferlot Ad

SD560BP

SD560BP STANDARD RECTIFIER

Features GlassPassivatedDieConstruction IdeallySuitedforAutomaticAssembly LowForwardVoltageDrop LowPowerLoss BuiltStrainRelief PlasticCaseMaterialhasULFlammability ClassificationRating94V-O ThisisaPb−FreeDevice AllSMCpartsaretraceabletothewaferlot Addit

SD560C

SD560C STANDARD RECTIFIER

Features GlassPassivatedDieConstruction IdeallySuitedforAutomaticAssembly LowForwardVoltageDrop LowPowerLoss Built-inStrainRelief PlasticCaseMaterialhasULFlammability ClassificationRating94V-0 ThisisaPb−FreeDevice AllSMCpartsaretraceabletothewaferlot Ad