| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SD45 | Discrete Diodes | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | SIRECTIFIER | |
FAST RECOVERY DIODES Stud Version Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
FAST RECOVERY DIODES Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
Fast Recovery Diodes (Stud Version), 400/450 A FEATURES •Highpowerfastrecoverydiodeseries •2.0to3.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv | VishayVishay Siliconix 威世科技 | Vishay | ||
Fast Recovery Diodes (Stud Version), 400/450 A FEATURES •Highpowerfastrecoverydiodeseries •2.0to3.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv | VishayVishay Siliconix 威世科技 | Vishay | ||
Fast Recovery Diodes (Stud Version), 400/450 A FEATURES •Highpowerfastrecoverydiodeseries •2.0to3.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv | VishayVishay Siliconix 威世科技 | Vishay | ||
Fast Recovery Diodes (Stud Version), 400/450 A FEATURES •Highpowerfastrecoverydiodeseries •2.0to3.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv | VishayVishay Siliconix 威世科技 | Vishay | ||
FAST RECOVERY DIODES Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
FAST RECOVERY DIODES Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
FAST RECOVERY DIODES Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
FAST RECOVERY DIODES Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
FAST RECOVERY DIODES Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
FAST RECOVERY DIODES Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
FAST RECOVERY DIODES Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
FAST RECOVERY DIODES Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
FAST RECOVERY DIODES Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
FAST RECOVERY DIODES Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
FAST RECOVERY DIODES Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
FAST RECOVERY DIODES Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
FAST RECOVERY DIODES Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-N+Darl
- 性质：
低频或音频放大 （LF）_开关管 （S）_功率放大 （L
- 封装形式：
直插封装
- 极限工作电压：
45V
- 最大电流允许值：
10A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BDT63,BDT65,BDW93,BDX33,
- 最大耗散功率：
90W
- 放大倍数：
β>1000
- 图片代号：
B-10
- vtest：
45
- htest：
999900
- atest：
10
- wtest：
90
详细参数
- 型号：
SD45
- 功能描述：
Analog IC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
高频管 |
155 |
专营高频管模块,全新原装! |
询价 | ||
SILAN |
2017+ |
SOP8 |
65895 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
TI |
5000 |
自己现货 |
询价 | ||||
STM |
05+ |
原厂原装 |
4747 |
只做全新原装真实现货供应 |
询价 | ||
SAWNICS |
2022 |
SMD |
2155 |
原厂原装正品,价格超越代理 |
询价 | ||
SAWNICS |
16+ |
原厂封装 |
5000 |
原装现货假一罚十 |
询价 | ||
SAWNIC |
23+ |
na |
18000 |
询价 | |||
伦扬 |
2022+ |
SOP-8 |
5000 |
只做原装公司现货 |
询价 | ||
SILAN |
1645+ |
SOP-8 |
8500 |
只做原装进口,假一罚十 |
询价 | ||
SILAN |
2020+ |
SOP8 |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 |
