SD200SA60B

SILICON SCHOTTKY RECTIFIER DIE

UltralowReverseLeakageCurrent SoftReverseRecoveryatLowandHighTemperature VeryLowForwardVoltageDrop LowPowerLoss,HighEfficiency HighSurgeCapacity GuardRingforEnhancedDurabilityandLongTermReliability GuaranteedReverseAvalancheCharacteristics Electrically/Mech

SD200SA60B

SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop (150 째C TJ Operation)

SD200SA60B.T

Package：模具；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：PIV 60V IO 60A CHIP SIZE 200MIL

SD200SA60B.T1

Package：模具；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：PIV 60V IO 60A CHIP SIZE 200MIL

SD200SA60B.T2

Package：模具；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：PIV 60V IO 60A CHIP SIZE 200MIL

SD200SA60C

SILICONSCHOTTKYRECTIFIERDIEVeryLowForwardVoltageDrop(150째CTJOperation)

VS-GA200SA60UP

InsulatedGateBipolarTransistor(UltrafastSpeedIGBT),100A

VS-GT200SA60UP

InsulatedGateBipolarTransistor(TrenchIGBT),200A

FEATURES •TrenchIGBTtechnologywithpositive temperaturecoefficient •SquareRBSOA •5μsshortcircuitcapability •TJmaximum=175°C •Fullyisolatedpackage •Verylowinternalinductance(≤5nHtypical) •Industrystandardoutline •ULapprovedfileE78996 •Materialcategoriz

VS-GT200SA60UP

InsulatedGateBipolarTransistor(TrenchIGBT),200AS

FEATURES •TrenchIGBTtechnologywithpositive temperaturecoefficient •SquareRBSOA •5μsshortcircuitcapability •TJmaximum=175°C •Fullyisolatedpackage •Verylowinternalinductance(≤5nHtypical) •Industrystandardoutline •ULapprovedfileE78996 •Materialcategoriz