SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop (150 째C TJ Operation)

文件：54.24 Kbytes 页数：3 Pages

SENSITRON

Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A

文件：153.03 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Insulated Gate Bipolar Transistor (Trench IGBT), 200 A

FEATURES • Trench IGBT technology with positive temperature coefficient • Square RBSOA • 5 μs short circuit capability • TJ maximum = 175 °C • Fully isolated package • Very low internal inductance (≤ 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categoriz

文件：176.7 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Insulated Gate Bipolar Transistor (Trench IGBT), 200 AS

FEATURES • Trench IGBT technology with positive temperature coefficient • Square RBSOA • 5 μs short circuit capability • TJ maximum = 175 °C • Fully isolated package • Very low internal inductance (≤ 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categoriz

文件：176.15 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技