P-CHANNEL ENHANCEMENT MODE D MOS FET

[TOPAZ SEMICONDUCTOR] FEATURES ■ Ultra-Low Channel OFF leakage,

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ETCList of Unclassifed Manufacturers

未分类制造商

P-CHANNEL ENHANCEMENT MODE D MOS FET

[TOPAZ SEMICONDUCTOR] FEATURES ■ Ultra-Low Channel OFF leakage,

文件：85.75 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Chip Type 2C2222A Geometry 0400 Polarity NPN

Chip type 2C2222A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applica tions.

文件：29.63 Kbytes 页数：1 Pages

Semicoa

Chip Type 2C2222A Geometry 0400 Polarity NPN

Chip type 2C2222A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applica tions.

文件：29.63 Kbytes 页数：1 Pages

Semicoa

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：464.68 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 4.5 µs recovery time ■ High voltage ratings up to 4500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud version c

文件：418.66 Kbytes 页数：8 Pages

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 4.5 µs recovery time ■ High voltage ratings up to 4500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud version c

文件：418.66 Kbytes 页数：8 Pages

IRF

丝印：24W；Package：SOD-323；Unidirectional TVS Diodes

Description The SDxx Series is designed for applications requiring transient over voltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Thes

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GWSEMI

唯圣电子

Unidirectional TVS Diodes

FEATURES IEC61000-4-2 (ESD) #15kV (air), +8KkV (contact) IEC61000-4-4 (EFT) 40A (5/50ns) 350 Watts Peak Pulse Power per (tp=8/20ps) Protects one 1/0 line (unidirectional) Low clamping voltage Working voltages : 3.3V to 36V Low leakage current APPLICATIONS Cell Phone Hands

文件：435.55 Kbytes 页数：3 Pages

UMW

友台半导体

350W UNIDIRECTIONAL TVS DIODES

DESCRIPTION The S D03 SD36 i s available in SO D 3 23 p a ckage FEATURES ⚫ IEC6100-4-2 (ESD) ±15kV (air), ±8kV (contact) ⚫ IEC6100-4-4 (EFT) 40A (5/50ηs) ⚫ 350 Watts Peak Pulse Power per (tp=8/20μs) ⚫ Protects one I/O line (unidirectional) ⚫ Low clamping voltage ⚫ Working voltage: 3.3V

文件：372.87 Kbytes 页数：5 Pages

AITSEMI

创瑞科技