High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

文件：395.43 Kbytes 页数：8 Pages

ETC1List of Unclassifed Manufacturers

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High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

文件：395.43 Kbytes 页数：8 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

文件：395.43 Kbytes 页数：8 Pages

ETC1List of Unclassifed Manufacturers

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RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS

DESCRIPTION The SD1888-03 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz SATCOM applications. Agold metallized emitter-ballasted die geometry is employed providing high gain and efficiency while ensuring long term reliability and ruggedness under severe operatin

文件：42.79 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

文件：395.43 Kbytes 页数：8 Pages

ETC1List of Unclassifed Manufacturers

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SILICON SCHOTTKY BARRIER DIODE

Features • Small surface mounting type • Ultra low VF • High reliability

文件：124.28 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS

DESCRIPTION The SD1891-03 is a 28 V silicon NPN transistor designed for INMARSAT and other 1.6 GHz SATCOM applications. This device utilizes polysilicon site ballasting with a gold metallized die to achieve high reliability and ruggedness. ■ 1.65 GHz ■ 28 VOLTS ■ GOLD METALLIZED SYSTEM ■ POLY

文件：66.28 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

Chip Type 2C1893 Geometry 4500 Polarity NPN

Chip type 2C1893 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for medium power amplifier and switching applications. Features: • Medium power ratings

文件：42.91 Kbytes 页数：1 Pages

Semicoa

Chip Type 2C1893 Geometry 4500 Polarity NPN

Chip type 2C1893 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for medium power amplifier and switching applications. Features: • Medium power ratings

文件：42.91 Kbytes 页数：1 Pages

Semicoa

RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS

DESCRIPTION The SD1894 is a common base silicon NPN bipolar device optimized for 1.6 GHz SATCOM applications. The SD1894 offers superior gain and collector efficiency, making it an ideal choice for Class C power amplifiers used in portable as well as fixed SATCOM terminals. ■ CLASS C ■ 1.6 GHz

文件：45.08 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体