NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI SD1407 is a class AB common Emitter Transistor Designed for broadband amplifier operations up to 30 MHz. FEATURES: • PG = 15 dB min. at 125 W/30 MHz • High linear power output • IMD3 = -30 dBc max. at 125 W(PEP) • Omnigold™ Metalization System

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ASI

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state-of-the-art diffused emitter ballasting for improved ruggedness and reliability. ■ 30 MHz ■ 28 VOLTS ■ IMD −30 dB ■ COMMON EMITTER ■ GOLD METALLIZATIO

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STMICROELECTRONICS

意法半导体

Trans RF BJT NPN 36V 20A 4-Pin(4+Tab) Case M-174

NJS

新泽西半导体

N-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • Motor drive application. • Low ON-resistance. • 4V drive.

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SANYO

三洋

P-Channel 1.8-V (G-S) MOSFET

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VISHAYVishay Siliconix

威世威世科技公司

SILICON HYPERABRUPT TUNING DIODES

SILICON HYPERABRUPT TUNING DIODES ·High capacitance ratios ·Linear tuning between 2 and 8 volts ·Available over a broad range junction capacitances ·Satisfies a large number of broadband applications thru the VHF frequency band

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KNOX