SCHOTTKY BARRIER DIODES

FEATURES : * For general purpose applications * The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. * The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for

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SYNSEMI

SCHOTTKY DIODES

FEATURES ♦ Low forward voltage drop ♦ Guard ring construction for transient protection ♦ Negligible reverse recovery time ♦ low reverse capacitance

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SY

顺烨电子

Surface Mount Schottky Barrier Diodes

Features • Low Forward Voltage

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DGNJDZ

南晶电子

PN Junction Guard Ring Transient and ESD Protection

Features: • Low Turn-on Voltage • Fast Switching • PN Junction Guard Ring Transient and ESD Protection • Designed for Surface Mount Application • Plastic Material —UL Recognition Flammability Classification 94V-O • Green Products in Compliance with the ROHS Directive • This is a Pb − Free D

文件：189.57 Kbytes 页数：5 Pages

SMC

桑德斯微电子

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features: • Low Turn-on Voltage • Fast Switching • PN Junction Guard Ring Transient and ESD Protection • Designed for Surface Mount Application • Plastic Material —UL Recognition Flammability Classification 94V-O • Green Products in Compliance with the ROHS Directive • This is a Pb − Free D

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SMC

桑德斯微电子

丝印：S6；Package：SOD-323；Schottky Barrier Diode

FEATURES ● Low Forward Voltage Drop. ● Guard Ring Construction For Transient Protection. ● Negligible Reverse Recovery Time. ● Low Reverse Capacitance. APPLICATIONS ● Schotty barrier switching.

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SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SCHOTTKY DIODES

FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction For Transient Protection ● Negligible Reverse Recovery Time ● Low Reverse Capacitance APPLICATIONS ● Schotty barrier switching

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CHENDA

辰达半导体

Schottky Barrier Diode

FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction For Transient Protection ● Negligible Reverse Recovery Time ● Low Reverse Capacitance APPLICATIONS ● Schotty barrier switching

文件：316.12 Kbytes 页数：3 Pages

CHENDA

辰达半导体

SCHOTTKY DIODES

Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Negligible Reverse Recovery Time ● Low Reverse Capacitance

文件：142.24 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Low Forward Voltage Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

文件：94.83 Kbytes 页数：4 Pages

WTE

Won-Top Electronics