SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES

FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance Lead free in compliance with EU RoHS 2011/65/EU directive

文件：340.3 Kbytes 页数：4 Pages

PANJIT

強茂

0.35AMP Schottky Barrier Rectifiers

Features * Low Forward Voltage Drop * Guard Ring Construction for Transient Protection * Low Reverse Recovery Time * Low Reverse Capacitance

文件：364.3 Kbytes 页数：2 Pages

SECOS

喜可士

SILICON SCHOTTKY BARRIER DIODES

SILICON SCHOTTKY BARRIER DIODES for general purpose applications The SD103A, B, C is a metal on silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupl

文件：121.99 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

Small Signal Schottky Barrier Diodes

Small Signal Schottky Barrier Diodes Features • Low forward voltage drop • Guard ring construction for transient protection • Low reverse recovery time • Low reverse capacitance • RoHS compliant

文件：238.54 Kbytes 页数：3 Pages

TAITRON

Small Signal Switching Diodes

Features ◇ For general purpose applications ◇ Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and low logic le

文件：159.63 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

Schottky Barrier Diode

Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching

文件：136.37 Kbytes 页数：4 Pages

WINNERJOIN

永而佳

SCHOTTKY DIODES

[ITT Components] SCHOTTKY DIODES

文件：337.56 Kbytes 页数：3 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

SMALL SIGNAL SCHOTTKY DIODES

FEATURES For general purpose applications fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and cou

文件：433.58 Kbytes 页数：2 Pages

SAMYANG

三阳电子

SCHOTTKY BARRIER RECTIFIER DIODES

文件：328.37 Kbytes 页数：2 Pages

SUNMATE

森美特

PDF上传者：深圳冠荣电子有限公司

30V Schottky diode

文件：328.162 Kbytes 页数：2 Pages

SUNMATE

森美特

PDF上传者：深圳冠荣电子有限公司