SCHOTTKY DIODES

[ITT Components] SCHOTTKY DIODES

文件：337.56 Kbytes 页数：3 Pages

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Schottky Diodes

FEATURES ♦ For general purpose applications. ♦ The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes fo

文件：107.08 Kbytes 页数：3 Pages

GE

Small Signal Switching Diodes

VOLTAGE RANGE: 60 - 40 V POWER DIDDIPATION: 400 mW Features ◇ For general purpose applications ◇ The low forward voltage drop and fast switching marking it ideal for protection of MOS devices,steering, biasing and couping diodes for fast switching and low logic level applications.

文件：212.21 Kbytes 页数：3 Pages

LUGUANG

鲁光电子

SMALL SINGAL SCHOTTKY DIODES

FEATURES • For general purpose applications • The SD101 series is a Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling d

文件：397.2 Kbytes 页数：2 Pages

GXELECTRONICS

星合电子

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • The SD101 series is a Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasi

文件：95.5 Kbytes 页数：2 Pages

JINANJINGHENG

晶恒集团

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Turn-on Voltage • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection • Designed for Surface Mount Application • Plastic Material – UL Recognition Flammability Classification 94V-O

文件：47.24 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

SCHOTTKY BARRIER DIODE

FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time

文件：815.16 Kbytes 页数：4 Pages

SHUNYE

顺烨电子

Schottky Barrier Diode

FEATURES ♦ Low forward voltage drop ♦ Guard ring construction for transient protection ♦ Negligible reverse recovery time

文件：322.2 Kbytes 页数：3 Pages

CHENDA

辰达半导体

SCHOTTKY DIODES

FEATURES • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time

文件：755.39 Kbytes 页数：2 Pages

HTSEMI

金誉半导体

SCHOTTKY BARRIER DIODE

[Micro Electronic Instrument Inc.] VOLTAGE RANGE 40 To 60 Volts CURRENT 15 mA FEATURES • Fast Switching speed • Low forward voltage • Low capacitance • Guard ring for transient and ESD protection • Also available in the DO-35 package as SD101A and Mini-MELF as LL101A

文件：109.53 Kbytes 页数：2 Pages

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