TIP141

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

DarlingtonComplementarySiliconPowerTransistors Designedforgeneral−purposeamplifierandlowfrequencyswitchingapplications. Features •HighDCCurrentGain− MinhFE=1000@IC =5.0A,VCE=4V •Collector−EmitterSustainingVoltage−@30mA

TIP141

10AMPEREDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

TIP140,TIP141,TIP142-->NPN TIP145,TIP146,TIP147--->PNP ...designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications. •HighDCCurrentGain—MinhFE=1000@IC=5A,VCE=4V •Collector–EmitterSustainingVoltage—@30mA VCEO(sus)=60Vdc(Min)—TIP140,

TIP141

POWERTRANSISTORS(10A,60-100V,125W)

TIP141

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145/146/147

TIP141

POWERDARLINGTONS

DESCRIPTION TheTIP140,TIP141,TIP142aresiliconepitaxialbaseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinSOT-93plasticpackage.Theyareintendedforuseinpowerlinearandswitchingapplications.ThecomplementaryPNPtypesaretheT1P145,TIP146,TIP147res

TIP141

SILICONPLANARDARLINGTONPOWERTRANSISTORS

DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage

TIP141

NPNSILICONDARLINGTONS,SILICONPOWERTRANSISTORS

NPNSILICONDARLINGTONS,SILICONPOWERTRANSISTORS Theyaresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandare mountedinTO-3PNplasticpacktage. Theyareintendedforuseinpowerlinearandswitchingapplication. ThecomplementaryareTIP145,TIP146,TIP14

TIP141F

TO-3PFullyIsolatedPlasticPackageTransistorCDIL

TO-3PFullyIsolatedPlasticPackageTransistorCDIL

TIP141F

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •ComplementtoTIP145F/146F/147F •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse