丝印：SCT4036KW7；Package：TO-263-7L；N-channel SiC power MOSFET

● Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant ● Application ・Induction heating ・Motor drives ・Solar inverters ・DC/DC converters ・Switch mode power supplies

文件：1.71025 Mbytes 页数：15 Pages

ROHM

罗姆

1200V, 40A, 7引脚THD, 沟槽结构, SiC MOSFET

SCT4036KW7是一款1200V、40A的Nch SiC功率MOSFET。该产品采用沟槽结构实现了更低的导通电阻，\n\n\n\nROHM的第4代SiC MOSFET\n\nSCT4系列是改善了短路耐受时间并实现了业界超低导通电阻的第4代产品。与以往产品相比，该系列产品的导通电阻降低了约40%，开关损耗降低了约50%。另外，该产品还支持更容易处理的15V栅-源电压，使应用产品的设计更容易。 • Low on-resistance\n• Fast switching speed\n• Fast reverse recovery\n• Easy to parallel\n• Simple to drive\n• Pb-free lead plating ; RoHS compliant;

ROHM

罗姆

丝印：SCT4036KW；Package：TO-263-7L；Automotive Grade N-channel SiC power MOSFET

● Features 1) Qualified to AEC-Q101 2) Low on-resistance 3) Fast switching speed 4) Fast reverse recovery 5) Easy to parallel 7) Pb-free lead plating ; RoHS compliant 6) Simple to drive ● Application ・Automobile ・Switch mode power supplies

文件：1.42745 Mbytes 页数：17 Pages

ROHM

罗姆

1200V, 40A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

AEC-Q101 qualified automotive grade product. SCT4036KW7HR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about • Qualified to AEC-Q101\n• Low on-resistance\n• Fast switching speed\n• Fast reverse recovery\n• Easy to parallel\n• Simple to drive\n• Pb-free lead plating ; RoHS compliant;

ROHM

罗姆