N-channel SiC power MOSFET

Features 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel Application ・Solar inverters ・DC/DC converters ・Switch mode power supplies ・Induction heating ・Motor drives

文件：933.11 Kbytes 页数：13 Pages

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丝印：SCT3080AR；Package：TO-247-4L；Automotive Grade N-channel SiC power MOSFET

Features 1) Qualified to AEC-Q101 2) Low on-resistance 3) Fast switching speed 4) Fast reverse recovery 5) Easy to parallel 6) Simple to drive 7) Pb-free lead plating ; RoHS compliant Application ・Automobile ・Switch mode power supplies

文件：1.39113 Mbytes 页数：17 Pages

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650V Nch 4引脚封装 SiC（碳化硅）MOSFET

SCT3080AR是非常适用于要求高效率的服务器用电源、太阳能逆变器及电动汽车充电站等的沟槽栅结构SiC MOSFET。采用电源源极引脚和驱动器源极引脚分离的4引脚封装，能够充分地发挥出高速开关性能。尤其是可以显著改善导通损耗。与以往的3引脚封装（TO-247N）相比，导通损耗和关断损耗合起来预计可降低约35％的损耗。 • Low on-resistance\n• Fast reverse recovery\n• Simple to drive\n• High efficiency 4pin package\n• Evaluation board 'P02SCT3040KR-EVK-001';

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650V, 30A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

AEC-Q101 qualified automotive grade product. SCT3080ARHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. • Qualified to AEC-Q101\n• Low on-resistance\n• Fast switching speed\n• Fast reverse recovery\n• Easy to parallel\n• Simple to drive\n• Pb-free lead plating ; RoHS compliant;

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