650V, 4A, THD, 高浪涌电流耐量 SiC肖特基势垒二极管

可降低开关损耗，可高速开关。\n\n SiC支持页面\n\n评估板, 文件 应用实例介绍\n\n罗姆制SiC元器件 何谓SiC功率元器件？\n\n电子小知识#banner-area a:link {text-decoration: none !important;}#banner-area a {width: 160px;padding: 4px;margin: 5px 2px;text-align: center;font-size: 9px;color: #464646 !important;line-height: 200%;border-radius: 3px;position • Shorter recovery time\n• High-speed switching possible\n• High surge current capability;

ROHM

罗姆

丝印：SCS304AH；Package：TO-220ACP；SiC Schottky Barrier Diode

文件：757.79 Kbytes 页数：6 Pages

ROHM

罗姆

Silicon carbide Schottky Barrier Diode

Shorter recovery time, enabling high-speed switching. ·Shorter recovery time\n·Reduced temperature dependence\n·High-speed switching possible\n·High surge current capability;

ROHM

罗姆

Package：TO-220-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SHORTER RECOVERY TIME, ENABLING

Rohm Semiconductor