Single N-Channel Power MOSFET

Power MOSFET 30V, 180mΩ, 1.8A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or u

文件：526.98 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=135mΩ(typ.) • 4V drive • Halogen free compliance

文件：68.78 Kbytes 页数：4 Pages

SANYO

三洋

SCH1436: Power MOSFET, 30V, 180mΩ, 1.8A, Single N-Channel

This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Low On-Resistance\nImproves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation\nPb-Free, Halogen Free and RoHS compliance\nEnvironmental Consideration\nLow Capacitance\nEase of Drive, Faster Turn-on/Turn-off\nUltra small package SCH6 (1.6mm×1.6mm×0.56mmt)\nBoard Space Saving\n4V driv;

ONSEMI

安森美半导体

Single N-Channel Power MOSFET

Power MOSFET 30V, 180mΩ, 1.8A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or u

文件：526.98 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Single N-Channel Power MOSFET

Power MOSFET 30V, 180mΩ, 1.8A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or u

文件：526.98 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Single N-Channel Power MOSFET

Power MOSFET 30V, 180mΩ, 1.8A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or u

文件：526.98 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Single N-Channel Power MOSFET

Power MOSFET 30V, 180mΩ, 1.8A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or u

文件：526.98 Kbytes 页数：5 Pages

ONSEMI

安森美半导体