FAST RECOVERY DIODE

Features ● Surface mount device ● High voltage by mesa design ● High reliability Applications ● High speed switching

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Fuji

富士通

SILICON GATE ENHANCEMENT MODE

General Description Silicon VDMOS transistor designed specifically for Broadband RF applications. Suitable for Military Radios, Cellular Base Staions, Broadcast FM/AM, MRI, Laser Drivers and others. Polyfet process features low feedback and output capacitances, resulting in high Ft transistors w

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Polyfet

触摸芯片

ICman

晶尊微

100/101, 200/201, 300/301 Threaded Diaphragm Seal

FEATURES „ 316L Stainless steel top housing (standard) „ Available in wide range of wetted materials for process compatibility „ Flushing port (101, 201, 301) provides for easy cleaning of process „ Continuous duty design contains process if instrument is inadvertantly removed „ NSF-61 Compli

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ASHCROFT

雅斯科

100/101, 200/201, 300/301 Threaded Diaphragm Seal

FEATURES „ 316L Stainless steel top housing (standard) „ Available in wide range of wetted materials for process compatibility „ Flushing port (101, 201, 301) provides for easy cleaning of process „ Continuous duty design contains process if instrument is inadvertantly removed „ NSF-61 Compli

文件：2.17319 Mbytes 页数：5 Pages

ASHCROFT

雅斯科

Silicon Carbide Schottky Diode

文件：760.57 Kbytes 页数：5 Pages

JINGHENG

晶恒

高度集成的USB PD控制器

SC2010A是一个高度集成的USB PD控制器。它符合最新的USB Type-C和PD 3.0，并支持最流行的高压快速充电协议，具有多达3组DPDM接口。SC2010适用于适配器、手机充电器、车载充电器和移动电源。SC2010的额定电压为30V。通过集成USB PD基带物理层（PHY），Type-C检测，电压电流检测，10位高性能ADC, 调节VBUS 的PWM输出，最多2路N_MOS驱动，VBUS泄放电路，I2C接口和保护电路等以减少外部器件。嵌入式32位高性能微控制器提供32k 字节的OTP，为许多应用提供了经济有效的解决方案。支持各种保护机制，包括过压保护，过流保护，短路保护，过温保护 • USB Type-C端口\n √ 支持Type-C DRP协议\n √ 可配置RP和RD\n √ 死电池时支持Rd\n\n• USB功率分配（PD）\n √ 支持DFP / UFP/ DRP USB 3.0 PD\n √ 硬件BMC发射端和接收端\n √ 物理层完整功能\n √ 硬件CRC\n √ 硬件复位\n √ 集成PD 3.0协议\n √ 支持SOP '，兼容E-marker\n\n• 3组DPDM快速充电端口\n √ 3组软件控制DPDM端口\n √ 支持苹果充电, BC1.2, DCP, HVDCP, FC, AFC, FCP.SCP,VOOC,UART,和其他专用充电协议\n\;

SouthChip

南芯科技

通用厚膜电阻

SUNWAY

信维通信