首页 >SC1405DITS.TRT>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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HighSpeedSynchronousPowerMOSFETSmartDriver Description TheSC1405DisaDual-MOSFETDriverwithaninternalOverlapProtectionCircuittopreventshoot-through.Eachdriveriscapableofdrivinga3000pFloadin15nsrise/falltimeandhasULTRA-LOWpropagationdelayfrominputtransitiontothegateofthepowerFETs.AdaptiveOverlapP | SEMTECHSemtech Corporation 升特 | SEMTECH | ||
HIGHSPEEDSYNCHRONOUSPOWERMOSFETSMARTDRIVER DESCRIPTION TheSC1405isaDual-MOSFETDriverwithaninternalOverlapProtectionCircuittopreventshoot-throughfromVINtoGNDinthemainswitchingandsynchronousMOSFET’s.Eachdriveriscapableofdrivinga3000pFloadin20nsrise/falltimeandhasULTRAFASTpropagationdelayfrominput | SEMTECHSemtech Corporation 升特 | SEMTECH | ||
HFto2000MHzClassABCommonSource-PowerSO-10RF HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2to | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
RF&MICROWAVETRANSISTORSHFSSBAPPLICATIONS HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDevice General-PurposeSwitchingDeviceApplications Features •Motordriveapplication. •LowON-resistance. •4Vdrive. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
4AMPS,200-600VOLTS30nsecHYPERFASTRECTIFIER Features: •GuaranteedHighTemp.trr:50nsecMax(Axial)trr:60nsecMax(SMS) •HyperFastRecovery:30nsecMax. •PIVto600Volts •VoidFreeConstruction •HermeticallySealed •LowReverseLeakageCurrent •ForHighEfficiencyApplications •Replacementfor1N6626Serieswherefast | SSDI Solid States Devices, Inc | SSDI | ||
HYPERFASTRECTIFIER | SSDI Solid States Devices, Inc | SSDI | ||
40AMPS200-600VOLTS30nsecHYPERFASTRECTIFIER Features: •GuaranteedHighTemp.trr:50nsecMax(Axial)trr:60nsecMax(SMS) •HyperFastRecovery:30nsecMax. •PIVto600Volts •VoidFreeConstruction •HermeticallySealed •LowReverseLeakageCurrent •ForHighEfficiencyApplications •Replacementfor1N6626Serieswherefast | SSDI Solid States Devices, Inc | SSDI | ||
P-Channel1.8-V(G-S)MOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
P-Channel1.8-V(G-S)MOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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