首页 >SC11014CN>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
BipolarNPNDeviceinaHermeticallysealedTO3 | SEME-LAB Seme LAB | SEME-LAB | ||
iscSiliconNPNDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=90V(Min.) •HighDCCurrentGain- :hFE=1000(Min.)@IC=20A •LowCollectorSaturationVoltage- :VCE(sat)=3.0V(Max.)@IC=20A •ComplementtoTypeMJ11013 APPLICATIONS •Designedforuseasoutputdevicesi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ..designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. FEATURES: *HighGainDarlingtonPerformance *HighDCCurrentGainhFE=1000(Min)@lc=20A *MonolithicConstructionwithBuilt-inBase-EmitterS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
StandardRecoveryDiodes | NELLSEMINell Semiconductor Co., Ltd 尼尔半导体尼尔半导体股份有限公司 | NELLSEMI | ||
StandardRecoveryDiodes | NELLSEMINell Semiconductor Co., Ltd 尼尔半导体尼尔半导体股份有限公司 | NELLSEMI | ||
StandardRecoveryDiodes | NELLSEMINell Semiconductor Co., Ltd 尼尔半导体尼尔半导体股份有限公司 | NELLSEMI | ||
Thyristor/DiodePowerModules | NELLSEMINell Semiconductor Co., Ltd 尼尔半导体尼尔半导体股份有限公司 | NELLSEMI | ||
Thyristor/Diode | NELLSEMINell Semiconductor Co., Ltd 尼尔半导体尼尔半导体股份有限公司 | NELLSEMI | ||
StandardRecoveryDiodes | NELLSEMINell Semiconductor Co., Ltd 尼尔半导体尼尔半导体股份有限公司 | NELLSEMI | ||
Thyristor/DiodePowerModules | NELLSEMINell Semiconductor Co., Ltd 尼尔半导体尼尔半导体股份有限公司 | NELLSEMI |
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