TIP147

10AMPEREDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

TIP140,TIP141,TIP142-->NPN TIP145,TIP146,TIP147--->PNP ...designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications. •HighDCCurrentGain—MinhFE=1000@IC=5A,VCE=4V •Collector–EmitterSustainingVoltage—@30mA VCEO(sus)=60Vdc(Min)—TIP140,

TIP147

SILICONDARLINGTONTRANSISTORPNPEPITAXIAL(HIGHDCCURRENTGAIN)

HIGHDCCURRENTGAIN •ComplementarytoTIP140/141/142

TIP147

PNPSILICONPOWERDARLINGTONS

●DesignedforComplementaryUsewithTIP140,TIP141andTIP142 ●125Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A

TIP147

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheTIP140,TIP141andTIP142aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinTO-218plasticpackage.Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP145,TIP146andTI

TIP147

POWERTRANSISTORS(10A,60-100V,125W)

TIP147

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-5A(Min.) •IndustrialUse •ComplementtoTIP140/141/142

TIP147

DarlingtonComplementarySiliconPowerTransistors

TIP147

PNPEpitaxialSiliconDarlingtonTransistor

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-5A(Min.) •IndustrialUse •ComplementtoTIP140/141/142

TIP147

NPNSILICONDARLINGTONS,SILICONPOWERTRANSISTORS

TIP147

TO-247Plastic-EncapsulateTransistors

Features ■MonolithicDarlingtonconfiguration ■Integratedantiparallelcollector-emitterdiode Applications ■Linearandswitchingindustrialequipment