TIP146

POWERTRANSISTORS(10A,60-100V,125W)

TIP146

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

DarlingtonComplementarySiliconPowerTransistors Designedforgeneral−purposeamplifierandlowfrequencyswitchingapplications. Features •HighDCCurrentGain− MinhFE=1000@IC =5.0A,VCE=4V •Collector−EmitterSustainingVoltage−@30mA

TIP146

PNPSILICONPOWERDARLINGTONS

●DesignedforComplementaryUsewithTIP140,TIP141andTIP142 ●125Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A

TIP146

10AMPEREDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

TIP140,TIP141,TIP142-->NPN TIP145,TIP146,TIP147--->PNP ...designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications. •HighDCCurrentGain—MinhFE=1000@IC=5A,VCE=4V •Collector–EmitterSustainingVoltage—@30mA VCEO(sus)=60Vdc(Min)—TIP140,

TIP146

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-5A(Min.) •IndustrialUse •ComplementtoTIP140/141/142

TIP146

PNPEpitaxialSiliconDarlingtonTransistor

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-5A(Min.) •IndustrialUse •ComplementtoTIP140/141/142

TIP146F

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-5A(Min.) •IndustrialUse •ComplementtoTIP140F/141F/142F

TIP146F

PNP(HIGHDCCURRENTGAIN)

HIGHDCCURRENTGAIN MINhFE=1000@VCE=-4V,IC=-5A MonolithicConstructionWithBuiltInBase-EmitterShuntResistorsIndustrialUse ComplementtoTIP140F/141F/142F

TIP146F

SILICONPLANARDARLINGTONPOWERTRANSISTORS

SILICONPLANARDARLINGTONPOWERTRANSISTORS ForuseinPowerLinearandSwitchingApplications

TIP146G

DarlingtonComplementarySiliconPowerTransistors