PNP Silicon Transistor

Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) • Complementary pair with SBT5551F

文件：192.98 Kbytes 页数：3 Pages

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PNP Silicon Transistor

Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) • Complementary pair with SBT5551F

文件：267.38 Kbytes 页数：5 Pages

KODENSHI

可天士

General purpose amplifier

文件：267.38 Kbytes 页数：5 Pages

KODENSHI

可天士

PNP Silicon Transistor

文件：242.17 Kbytes 页数：4 Pages

AUK

PNP Silicon Transistor

文件：242.17 Kbytes 页数：4 Pages

AUK

Small Signal Transistors

• High collector breakdown voltage : VCBO = -160V, VCEO = -160V\n• Complementary pair with SBT5551F;

Kodenshi-AUK