SBRS8190T3G分立半导体产品的二极管-整流器-单规格书PDF中文资料

SBRS8190T3G属于分立半导体产品的二极管-整流器-单。由安森美半导体制造生产的SBRS8190T3G二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。

Schottky Power Rectifiers employ the use of the Schottky Barrier

principle in a large area metal-to-silicon power diode. State-of-the-art

geometry features epitaxial construction with oxide passivation and

metal overlay contact. Ideally suited for low voltage, high frequency

rectification, or as free wheeling and polarity protection diodes, in

surface mount applications where compact size and weight are critical

to the system. These state-of-the-art devices have the following

features:

特性 Features

• Small Compact Surface Mountable Package with J-Bend Leads

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction

• High Blocking Voltage − 100 Volts

• 175°C Operating Junction Temperature

• Guardring for Stress Protection

• HBM Class 3B, CDM(AEC) Class C5

• AEC−Q101 Qualified and PPAP Capable

• These are Pb−Free Devices

Mechanical Characteristics

• Case: Epoxy, Molded

• Weight: 95 mg (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Shipped in 12 mm Tape and Reel, 2,500 units per reel

• Cathode Polarity Band