丝印：SBRB；Package：SOT-25；LM3671, LM3671Q 2MHz, 600mA Step-Down DC-DC Converter

文件：6.85925 Mbytes 页数：39 Pages

TI

德州仪器

SWITCHMODE Schottky Power Rectifier

Switch-mode Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally sui

文件：165.47 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Switch-mode Schottky Power Rectifier

SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suite

文件：79.77 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Schottky Power Rectifier, Switch-Mode, 10 A, 45 V

This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supp

文件：268.7 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Switch-mode Schottky Power Rectifier

SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suite

文件：79.77 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

SWITCHMODE Schottky Power Rectifier

Switch-mode Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally sui

文件：165.47 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Schottky Power Rectifier, Switch-Mode, 10 A, 45 V

This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supp

文件：268.7 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: Features • Center−Tap Configuration • Guardring for Stress Protection • Low

文件：102.66 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

THINKI AUTO-GRADE 20.0 Ampere Surface Mount Schottky Barrier Rectifiers

Features  Low forward voltage drop ThinkiSemi matured ESD planar schottky  High current capability  High surge current capability  Low reverse leakage current Application  Automotive Inverters and Solar Inverters  Plating Power Supply,SMPS,EPS and UPS  Car Audio Amplifiers and Sou

文件：551.09 Kbytes 页数：3 Pages

THINKISEMI

思祁半导体

SWITCHMODE Power Rectifier

This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250

文件：148.01 Kbytes 页数：5 Pages

ONSEMI

安森美半导体