SBRA140NT3G数据手册批发供应安森美半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
SBRA140NT3G	文件：301.4 Kbytes Page：6 Pages	Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol 文件：301.4 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
NRVBA140NT3G	文件：301.4 Kbytes Page：6 Pages	Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol 文件：301.4 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
SBRT15U100SP5-13	文件：0 bytes Page：0 Pages	TO277	DIODES 美台半导体上传：深圳市振宏微科技有限公司	DIODES
SBT5833T1G	文件：0 bytes Page：0 Pages	SOT-523	RICHTEK立锜上传：飞驰半导体（深圳）有限公司	RICHTEK立锜
SBT5833T1G	文件：0 bytes Page：0 Pages	SOT-523	SIG 上传：飞驰半导体（深圳）有限公司	SIG

更多SBRA140NT3G供应商更新时间2026-1-27 9:55:00