CURRENT 16.0Amperes VOLTAGE 20 to 100 Volts

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DAESAN

RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS

DESCRIPTION The SD1680 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications. ■ 915 - 960 MHz ■ 24 VOLTS ■ CLASS AB PUSH PULL ■ INTERNAL INPUT MATCHING ■ DESIGNED FOR H

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STMICROELECTRONICS

意法半导体

SCHOTTKY BARRIER RECTIFIER

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal sliicon junction ,majority carriet conduction • Guard ring for overcoltage protection • Low power loss,high efficiency • High current capability ,Low forward voltage drop • High surge capability

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CHENYI

商朗电子

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rec

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MOSPEC

统懋