SBP-8531043824-1010-E1数据手册原装现货-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
SBP-8531043824-1010-E1	文件：397.46 Kbytes Page：3 Pages	W-Band Power Amplifier, 85 to 100 GHz, 38 dB Gain, 24 dBm P1dB Description: Model SBP-8531043824-1010-E1 is a GaAs based high power amplifier with a typical small signal gain of 38 dB and a nominal P1dB of +24 dBm across the frequency range of 85 to 100 GHz. The DC power requirement for the amplifier is +8 VDC/2 A. The mechanical configuration offers an in l 文件：397.46 Kbytes 页数：3 Pages	ERAVANT	ERAVANT
SBP-8531043824-1010-E1	文件：300 bytes Page：1 Pages	W-Band Power Amplifier, SBP-8531043824-1010-E1 is a GaAs based high power amplifier with a typical small signal gain of 38 dB and a nominal P1dB of +24 dBm across the frequency range of 85 to 100 GHz. The DC power requirement for the amplifier is +8 VDC/2 A. The mechanical configuration offers an in line structure with WR-	Eravant	Eravant
SBR10E45P5-13	文件：0 bytes Page：0 Pages	DIODES/美台 POWERDI5	DIODES/美台上传：深圳市佳杰伟业科技有限公司	DIODES/美台
SBR20A300CTFP-G	文件：0 bytes Page：0 Pages	DIODES TO220F	DIODES 美台半导体上传：深圳市富诚威科技有限公司	DIODES
SBR20U150CT	文件：0 bytes Page：0 Pages	DIODES美台 TO-220	DIODES美台上传：深圳市乐创天科技有限公司	DIODES美台

更多SBP-8531043824-1010-E1供应商更新时间2025-10-11 17:03:00